Nova Crystal Technologies LimitedNOVA CRYSTALTECHNOLOGIES LIMITED
QNV-ARRAY · PATTERNED DEFECT ENGINEERING

NV Array
Diamond

Spatially defined NV architectures created by patterned implantation for controlled positioning, custom pitch and scalable quantum-device research.

Single NV / Ensemble ArrayDepth: 5–70 nmCustom spatial pattern¹⁴N⁺ / ¹⁵N⁺{100}/{110}/{111}Ra < 1 nm
Three-dimensional patterned NV center array in diamond
Patterned implantationSpatially defined defect placement
Custom spatial patternSpacing selected around the target architecture
Single / ensemble sitesArchitecture selected around the experiment
Surface-readyH / O termination available by project
Array Architectures

Control where the NVs are,
not only how many.

NV arrays add a spatial-design variable to quantum diamond. The same electronic-grade host can be patterned as isolated sites, repeated arrays or localized clusters depending on the measurement and interaction length scale.

QNV-SARRAY

Single-NV / sparse arrays

Patterned implantation is used to create spatially defined sites intended for isolated or sparse NV formation, useful for single-defect studies, quantum registers and position-controlled sensing.

Three-dimensional shallow single-NV sparse array in diamond with custom spatial pattern and 5–70 nm depth
QNV-ARRAY / CLUSTER

Ensemble arrays & clusters

Higher-dose patterned regions create local NV ensembles or compact clusters, enabling scalable sensor pixels, strong local fluorescence and experiments that depend on NV–NV proximity.

Three-dimensional shallow NV ensemble array and cluster in diamond with 5–70 nm depth; cluster inter-NV distance 20–500 nm
Pattern → Function

Different NV architectures
enable different experiments.

Patterned implantation is valuable because the spatial architecture itself becomes an experimental parameter. Sparse sites, compact clusters and repeated ensemble pixels address different sensing, interaction and scaling requirements.

Three-dimensional comparison of shallow single-NV sparse arrays, NV clusters with 20–500 nm inter-NV distance, and ensemble arrays with 100 nm–10 micrometer spacing, all at 5–70 nm depth
Engineering Variables

Pattern, depth and density
are designed together.

The final NV architecture depends on mask geometry, implantation species, energy, dose, host material, annealing and surface preparation. Nova can define these variables around the target experiment.

01 · PATTERN

Geometry

Square, linear, grid, local cluster or custom patterns can be designed around optical and device geometry.

02 · DEPTH

Implant Energy

2–50 keV implantation supports typical NV depths of 5–70 nm, including commonly used 5, 10, 20, 30 and 70 nm targets; project-specific conditions are available.

03 · SPECIES

Ion Selection

¹⁴N⁺ and ¹⁵N⁺ are available for NV engineering; selected Si implantation projects can also be discussed.

04 · SURFACE

Finish & Termination

Ultra-fine polishing plus hydrogen or oxygen termination can be selected around shallow-array experiments.

Typical Specifications

Build the array around the experiment.

Parameters below describe the current engineering window. Exact implantation recipe, pitch, dose and expected NV occupancy are confirmed project-by-project because they are coupled to the lithography design and target application.

QNV-SArrayQNV-ArrayCustom Cluster
Substrate
Electronic-grade single-crystal diamond
Substrate orientation
{100} / {110} / {111}
Typical substrate size
2×2 / 4×4 / 5×5 mm; custom formats available
Implanted species
¹⁴N⁺ / ¹⁵N⁺; selected ²⁸Si⁺ projects
Implantation energy
2–50 keV
Typical depth
5 / 10 / 20 / 30 / 70 nm; other depths by project
Pattern architecture
Single-site array / ensemble array / local cluster / custom geometry
Single-NV / sparse-array spacing
Custom; no fixed catalog spacing requirement
Cluster inter-NV distance
20–500 nm typical engineering window
Ensemble-array spacing
100 nm–10 μm typical; custom by pattern process
Ensemble-array dose
Typically 10¹³–10¹⁴ ions/cm²; project-specific
Surface roughness
Ra < 1 nm*
Surface termination
Hydrogen / Oxygen available by project
Characterization
PL mapping / confocal imaging / spatial uniformity / spin-coherence characterization by project
* Final occupancy, NV conversion efficiency, positional spread, depth distribution and spin properties depend on implantation, annealing, surface condition and measurement configuration. These are confirmed per project rather than treated as universal guarantees.
Fabrication Flow

From array design to
engineered NV architecture.

The workflow can start from a target pitch and sensing geometry rather than a fixed catalog recipe.

01Define geometryArray size, custom sparse-array spacing, 20–500 nm cluster distance and ensemble-array pitch.
02Select hostElectronic-grade substrate, orientation and thickness.
03Pattern & implantMask, ion species, energy and dose selected together.
04Activate NVsPost-implantation processing and annealing.
05Finish & verifySurface preparation, PL/confocal mapping and project-specific spin tests.
Applications

Spatial control opens
new experimental geometries.

NV arrays are useful where location, repetition, local density or interaction distance matters as much as the host crystal itself.

01

Quantum Information

Position-controlled single-NV sites and compact clusters for quantum-register and spin-network studies.

02

Nanoscale Sensing

Patterned shallow NV sites for local magnetic and electric-field measurements.

03

Super-Resolution Imaging

Defined NV patterns as test structures for optical localization, confocal and super-resolution methods.

04

Scalable Sensor Pixels

Large-area patterned ensemble arrays for repeatable sensing regions and device integration.

Need a custom NV array?

Send the target array pitch, active area, desired NV depth, single-site or ensemble architecture, substrate orientation and any surface/characterization requirements. We can translate them into an engineering specification.

Discuss Your Experiment →